advanced power n and p-channel enhancement electronics corp. mode power mosfet low gate charge n-ch bv dss 35v fast switching speed r ds(on) 25m pdip-8 package i d 7a p-ch bv dss -35v r ds(on) 40m description i d -6.1a absolute maximum ratings symbol parameter rating units n-channel p-channel v ds drain-source voltage 35 -35 v v gs gate-source voltage 20 20 v i d @t a =25 continuous drain current 3 7 -6.1 a i d @t a =70 continuous drain current 3 5.7 -5 a i dm pulsed drain current 1 30 -30 a p d @t a =25 total power dissipation 2.0 w linear derating factor 0.016 w/ t stg storage temperature range -55 to 150 t j operating junction temperature range -55 to 150 symbol value unit rthj-a maximum thermal resistance, junction-ambient 3 62.5 /w data and specifications subject to change without notice parameter 1 thermal data AP4511GD rohs-compliant product g2 d2 s2 g1 d1 s1 d1 d1 d2 d2 s1 g1 s2 g2 pdip-8 a dvanced power mosfets from apec provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. 200805262
n-ch electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 35 - - v ?? v dss / ? t j breakdown voltage temperature coefficient reference to 25 : , i d =1ma - 0.02 - v/ : r ds(on) static drain-source on-resistance 2 v gs =10v, i d =7a - 20 25 m v gs =4.5v, i d =5a - 30 37 m v gs(th) gate threshold voltage v ds =v gs , i d =250ua 1 - 3 v g fs forward transconductance v ds =10v, i d =7a - 9 - s i dss drain-source leakage current v ds =35v, v gs =0v - - 1 ua drain-source leakage current (t j =70 o c) v ds =28v, v gs =0v - - 25 ua i gss gate-source leakage v gs =20v - - 100 na q g total gate charge 2 i d =7a - 11 18 nc q gs gate-source charge v ds =28v - 3 - nc q gd gate-drain ("miller") charge v gs =4.5v - 6 - nc t d(on) turn-on delay time 2 v ds =18v - 12 - ns t r rise time i d =1a - 7 - ns t d(off) turn-off delay time r g =3.3 ? v gs =10v - 22 - ns t f fall time r d =18 -6- ns c iss input capacitance v gs =0v - 830 1330 pf c oss output capacitance v ds =25v - 150 - pf c rss reverse transfer capacitance f=1.0mhz - 110 - pf r g gate resistance f=1.0mhz - 1.2 1.8 source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =1.7a, v gs =0v - - 1.2 v t rr reverse recovery time 2 i s =7a, v gs =0v - 18 - ns q rr reverse recovery charge di/dt=100a/s - 12 - nc 2 AP4511GD
AP4511GD p-ch electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =-250ua -35 - - v ?? v dss / ? t j breakdown voltage temperature coefficient reference to 25 : ,i d =-1ma - -0.02 - v/ : r ds(on) static drain-source on-resistance 2 v gs =-10v, i d =-6a - 35 40 m v gs =-4.5v, i d =-4a - 53 60 m v gs(th) gate threshold voltage v ds =v gs , i d =-250ua -1 - -3 v g fs forward transconductance v ds =-10v, i d =-6a - 9 - s i dss drain-source leakage current v ds =-35v, v gs =0v - - -1 ua drain-source leakage current (t j =70 o c) v ds =-28v, v gs =0v - - -25 ua i gss gate-source leakage v gs =20v - - 100 na q g total gate charge 2 i d =-6a - 10 16 nc q gs gate-source charge v ds =-28v - 2 - nc q gd gate-drain ("miller") charge v gs =-4.5v - 6 - nc t d(on) turn-on delay time 2 v ds =-18v - 10 - ns t r rise time i d =-1a - 6 - ns t d(off) turn-off delay time r g =3.3 ,v gs =-10v - 26 - ns t f fall time r d =18 -7- ns c iss input capacitance v gs =0v - 690 1100 pf c oss output capacitance v ds =-25v - 165 - pf c rss reverse transfer capacitance f=1.0mhz - 130 - pf r g gate resistance f=1.0mhz - 5.2 7.8 source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =-1.7a, v gs =0v - - -1.2 v t rr reverse recovery time 2 i s =-6a, v gs =0v - 20 - ns q rr reverse recovery charge di/dt=-100a/s - 12 - nc notes: 1.pulse width limited by max. junction temperature. 2.pulse test 3.surface mounted on 1 in 2 copper pad of fr4 board , t < 10sec ; 90 : /w when mounted on min. copper pad. this product is sensitive to electrostatic discharge, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized. apec does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. apec reserves the right to make changes without further notice to any products herein to improve reliability, function or design. 3
n-channel fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature 4 AP4511GD 0 10 20 30 40 50 012345 v ds , drain-to-source voltage (v) i d , drain current (a) t a =25 o c 10v 7.0v 5.0v 4.5v v g =3.0v 0 2 4 6 0 0.2 0.4 0.6 0.8 1 1.2 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =150 o c 0.4 0.8 1.2 1.6 -50 0 50 100 150 t j , junction temperature ( o c) normalized v gs(th) (v) 0 10 20 30 40 50 012345 v ds , drain-to-source voltage (v) i d , drain current (a) t a = 150 o c 10v 7.0v 5.0v 4.5v v g =3.0v 20 40 60 80 246810 v gs , gate-to-source voltage (v) r ds(on) (m ) i d =5a t a =25 o c 0.6 1.0 1.4 1.8 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d =7a v g =10v
AP4511GD n-channel fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. transfer characteristics fig 12. gate charge waveform 5 q v g 4.5v q gs q gd q g charge 0 4 8 12 16 0 5 10 15 20 25 q g , total gate charge (nc) v gs , gate to source voltage (v) i d =7a v ds =28v 10 100 1000 1 5 9 1317212529 v ds , drain-to-source voltage (v) c (pf) f =1.0mhz c iss c oss c rss 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 t , pulse width (s) normalized thermal response (r thja ) p dm duty factor = t/t peak t j = p dm x r thja + t a r thja =90 o c/w t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse 0.01 0.1 1 10 100 0.1 1 10 100 v ds , drain-to-source voltage (v) i d (a) t a =25 o c single pulse 100us 1ms 10ms 100ms 1s dc 0 10 20 30 0246 v gs , gate-to-source voltage (v) i d , drain current (a) t j =150 o c t j =25 o c v ds =5v
p-channel fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature 6 AP4511GD 0 10 20 30 40 50 012345 -v ds , drain-to-source voltage (v) -i d , drain current (a) t a =25 o c -10v -7.0v -5.0v -4.5v v g = - 3.0v 30 50 70 90 110 246810 -v gs ,gate-to-source voltage (v) r ds(on) (m ) i d =-4a t a =25 o c 0.4 0.8 1.2 1.6 -50 0 50 100 150 t j , junction temperature ( o c) normalized -v gs(th) (v) 0 10 20 30 40 50 012345 -v ds , drain-to-source voltage (v) -i d , drain current (a) t a = 150 o c -10v -7.0v -5.0v -4.5v v g = - 3.0v 0.6 0.8 1.0 1.2 1.4 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d =-6a v g =-10v 0 2 4 6 0 0.2 0.4 0.6 0.8 1 1.2 -v sd , source-to-drain voltage (v) -i s (a) t j =25 o c t j =150 o c
AP4511GD p-channel fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. transfer characteristics fig 12. gate charge waveform 7 0 4 8 12 16 0 5 10 15 20 25 q g , total gate charge (nc) -v gs , gate to source voltage (v) i d =-6a v ds = - 28v 100 1000 10000 1 5 9 13 17 21 25 29 -v ds , drain-to-source voltage (v) c (pf) f =1.0mh z c iss c oss c rss 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 t , pulse width (s) normalized thermal response (r thja ) p dm duty factor = t/t peak t j = p dm x r thja + t a r thja =90 o c/w t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse 0.01 0.1 1 10 100 0.1 1 10 100 -v ds , drain-to-source voltage (v) -i d (a) t c =25 o c single pulse 100us 1ms 10ms 100ms 1s dc 0 10 20 30 0246 -v gs , gate-to-source voltage (v) -i d , drain current (a) t j =150 o c t j =25 o c v ds =-5v q v g -4.5v q gs q gd q g charge
package outline : dip-8 millimeters min nom max a 3.60 4.50 5.40 a1 0.38 ---- ---- a2 2.90 3.95 5.00 b 0.36 0.46 0.56 b1 1.10 1.45 1.80 b2 0.76 0.98 1.20 c 0.20 0.28 0.36 d 9.00 9.60 10.20 e 6.10 6.65 7.20 e1 7.62 7.94 8.26 e2 8.30 9.65 11.00 e l 3.18 ---- ---- 1.all dimensions are in millimeters. 2.dimension does not include mold protrusions. ?? part marking information & packing : dip-8 2.540 bsc symbol s advanced power electronics corp. package code part numbe r date code (ywwsss) y last digit of the year ww week sss sequence e d a e b1 b l a2 c e1 e2 a1 b2 meet rohs requirement for low voltage mosfet only 4511gd ywwsss 8
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